MOSFET
650V 4A N-CH MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 650 |
| Id (A) | 4 |
| Rds(on) (Ω) | 3.0 |
| Qg (nC) | 12 |
| Package | TO-252(DPAK) |
| status |
- Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.), 3.0Ω (Max.)
- Low gate charge : Qg = 12nC (Typ.)
- Low reverse transfer capacitance : Crss = 12pF (Typ.)
- Lower EMI Noise
- RoHS compliant device
- 100% avalanche tested
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
