MOSFET
650V 10A N-CH MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 650 |
| Id (A) | 9 |
| Rds(on) (Ω) | 0.85 |
| Qg (nC) | 35 |
| Package | TO-220F |
| status |
- High Voltage : BVDSS=650V(Min.)
- Low Crss : Crss =16pF(Typ.)
- Low gate charge : Qg=35nC(Typ.)
- Low RDS(on) : RDS(on)=0.85Ω(Max.)
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
