본문 바로가기

AP반도체

전체메뉴

MOSFET

AM12N90MF

900V N-Channel Enhancement-Mode MOSFET - RDS(ON) (VGS=10V,ID=5.5A) = 0.86Ω - High Power and current handing capability - Lead Free product is acquired - TO-220F Package

Specification

Comment Enhancement
Polarity N
BVdss (V) 900
Id (A) 12
Rds(on) (Ω) typ0.86, max 1.10
Qg (nC) 88
Package TO-220F
status Mass

Overview

At the Heart of Global Innovation,
Delivering Semiconductor Solutions
that Shape Tomorrow’s World.

Cs Cetnter+82 070-4693-2299

Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)
CEO: Yonghak Lee
Tel: +82-070-4693-2299 | Fax: +82-070-4009-4000 | Email: yhrhee@apsemi.com

© AP Semi. All Right Reserved.