MOSFET
20V N-Channel Enhancement Mode MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 20 |
| Id (A) | 2.8 |
| Rds(on) (Ω) | 0.07 |
| Qg (nC) | 4.2 |
| Package | SOT-23 |
| status | Mass |
- Max. RDS(ON) (VGS=4.5V,IDS=3.0A) = 60mΩ
- Max. RDS(ON) (VGS=2.5V,IDS=2.0A) = 115mΩ
- Max. RDS(ON) (VGS=1.8V,IDS=2.0A) = 130mΩ
- High Power and current handing capability
- Lead Free product is acquired
- Surface Mount Package
SOT-23(TO-236AB) Package Available
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
