MOSFET
800V N-Channel Enhancement-Mode MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 800 |
| Id (A) | 10 |
| Rds(on) (Ω) | 0.93 |
| Qg (nC) | 18 |
| Package | TO-220F |
| status | Mass |
- High Voltage : BVDSS=800V(Min.)
- Low Crss : Crss =18pF(Typ.)
- Low gate charge : Qg=58nC(Typ.)
- Low RDS(on) : RDS(on)=1.1Ω(Max.)
TO-220F Package Available
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
