MOSFET
50V P-Channel Enhancement-Mode MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | P |
| BVdss (V) | 50 |
| Id (A) | 40 |
| Rds(on) (Ω) | 0.019 |
| Qg (nC) | 36.69 |
| Package | TO-252 |
| status | Develop |
- Advanced trench process technology.
- High Density Cell Design For Ultra Low On-Resistance.
TO-252 Package Available
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
