MOSFET
■Low Crss : Crss 55pF(Typ.) ■Low gate charge : Qg= 22nC(Typ.) ■Low RDS(on) : RDS(on) = 0.14Ω, 0.17Ω
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 200 |
| Id (A) | 18 |
| Rds(on) (Ω) | 0.14 |
| Qg (nC) | 22 |
| Package | TO220F, TO252 |
| status | Mass |
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
