MOSFET
AM830RU : TO251 ■High Voltage : BVDSS 500V(Min.) ■Low Crss : Crss 8pF(Typ.) ■Low gate charge : Qg 13nC(Typ.) ■Low RDS(on) : 1.3Ω(Typ) ■Lower EMI noise ■100% Avala n che tested
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 500 |
| Id (A) | 4.5 |
| Rds(on) (Ω) | typ1.3, max 1.5 |
| Qg (nC) | 13 |
| Package | TO251 |
| status | Mass |
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
