MOSFET
900V N-Channel Enhancement-Mode MOSFET - RDS(ON) (VGS=10V,ID=5.5A) = 0.90Ω - High Power and current handing capability - Lead Free product is acquired - TO-220F Package
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 900 |
| Id (A) | 10 |
| Rds(on) (Ω) | typ1.0, max 1.35 |
| Qg (nC) | 52 |
| Package | TO220F |
| status | Mass |
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
